NDLI: Metal-molecule-semiconductor heterostructures for nano-device applications

Content Provider	IEEE Xplore Digital Library
Author	Lodha, S. Choi, J. Bhattacharya, S. Janes, D.B.
Copyright Year	2003
Description	Author affiliation: Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA (Lodha, S.; Choi, J.; Bhattacharya, S.; Janes, D.B.)
Abstract	The key challenge for molecular devices is the nature of the microscopic contacts to the active molecules and the need to develop well-controlled interfaces in order to achieve stable low-resistance contacts. When compared to metals, semiconductor contacts can be engineered more controllably and are more practical for device applications. In addition to the molecular energy levels, the energy bands of the semiconductor contact give us an extra degree of freedom for enhanced device functionality. The focus of the present work is on metal-molecule-semiconductor heterostructures in a Au/molecule/GaAs configuration. To begin with, stable monolayers of alkane-monothiols, alkane-dithiols and aromatic-dithiols on heavily doped p-type GaAs were self-assembled. A chemical etching procedure was used to overcome the oxidation of the GaAs surface during SAM formation. FTIR spectra indicate the formation of uniform and crystalline monolayers. Ellipsometry measurements give layer thicknesses that are consistent with calculations. A low-energy indirect path technique is used to evaporate Au on the molecular layer without damaging or penetrating it. I-V measurements on the Au/molecule/GaAs devices indicate a substantial increase in conductivity due to the presence of the molecular layer, which can be treated as a leaky dielectric. The results are consistent with the presence of molecular dipole moments at the interface.
Sponsorship	IEEE Nanotechnol. Council IEEE Region 6 Western USA
Starting Page	311
Ending Page	314
File Size	457106
Page Count	4
File Format	PDF
ISBN	0780379764
DOI	10.1109/NANO.2003.1231780
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-08-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Gold Microscopy Power engineering and energy Energy states Chemicals Etching Oxidation Crystallization Ellipsometry
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Metal-molecule-semiconductor heterostructures for nanoelectronic applications

The study of etching selectivity between InGaAs and AlGaAs in acid based etching solution

Substrate and Dipole Effects in Metal-Molecule-Semiconductor Heterostructures

Wet thermal oxidation for GaAs, GaN and Metal/GaN device applications

III-As pillar arrays by metal-assisted chemical etching for photonic applications

A GaAs Device Isolation Technique by Liquid Phase Chemical-Enhanced Oxidation

Light-stimulated ionic etching of semiconductor heterostructures

InGaP PHEMTs for wireless power applications

High temperature stable metal-GaAs contacts

Metal-molecule-semiconductor heterostructures for nano-device applications

Similar Documents

Metal-molecule-semiconductor heterostructures for nanoelectronic applications

The study of etching selectivity between InGaAs and AlGaAs in acid based etching solution

Substrate and Dipole Effects in Metal-Molecule-Semiconductor Heterostructures

Wet thermal oxidation for GaAs, GaN and Metal/GaN device applications

III-As pillar arrays by metal-assisted chemical etching for photonic applications

A GaAs Device Isolation Technique by Liquid Phase Chemical-Enhanced Oxidation

Light-stimulated ionic etching of semiconductor heterostructures

InGaP PHEMTs for wireless power applications

High temperature stable metal-GaAs contacts

Metal-molecule-semiconductor heterostructures for nano-device applications