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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ventzek, P.L.G. Hoekstra, R.J. Kushner, M.J. |
| Copyright Year | 1993 |
| Description | Author affiliation: Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA (Ventzek, P.L.G.) |
| Abstract | Summary form only given. Inductively coupled plasma (ICP) sources are being investigated for use in etching of semiconductors and deposition of polymers. A 2-D hybrid model has been developed to investigate these ICP reactors. The simulation consists of coupled electromagnetic, Monte Carlo, and fluid modules. The electromagnetic module solves for the antenna-generated azimuthal electric field in the plasma. The Monte Carlo simulation produces source functions for electron impact processing using both these fields and time-varying electrostatic fields obtained from the fluid module. The fluid module solves the continuity equations for charged and neutral species, and Poisson's equation while including RF biasing of the substrate. Results for densities and fluxes of ions and radicals to the substrate have been obtained for electropositive (e.g., Ar, He) and electronegative (He/CF/sub 4/, O/sub 2/, Ar/O/sub 2CF/sub 4/) gas mixtures. |
| File Size | 130454 |
| File Format | |
| ISBN | 0780313607 |
| ISSN | 07309244 |
| DOI | 10.1109/PLASMA.1993.593427 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1993-06-07 |
| Publisher Place | Canada |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Plasma applications Plasma simulation Plasma sources Electromagnetic coupling Poisson equations Substrates Argon Helium Plasma transport processes Etching |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering |
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