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Content Provider | IEEE Xplore Digital Library |
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Author | Re-Long Chiu Higgins, J. Shu-Lan Ying Shih-Tzung Chang Chung, J. Dick, B. Lee, E. |
Copyright Year | 2012 |
Description | Author affiliation: WaferTech LLC, 5509 N.W. Parker St. Camas, WA 98607-9299 USA (Re-Long Chiu; Higgins, J.; Shu-Lan Ying; Shih-Tzung Chang; Chung, J.; Dick, B.; Lee, E.) |
Abstract | IDDQ is an effective test method to screen out process related defects during chip probe (CP) test. Through failure analysis it was determined that some production wafers suffering minor yield loss in wafer edge for IDDQ failure was the result from inter layer dielectric cracks. Monitor wafers were processed and utilized for root cause finding using layer-by-layer inline KLA scan review, where the problem was found to be a scrubber clean tool used during a TiN glue layer post CVD clean stage. This caused the wafers to be impacted by process induced ESD damage. The scrubber clean stage is extensively used in the manufacture process to remove particles from the surface of wafer. The possible source of the ESD damage during scrubber clean was studied. After improving the scrubber clean process, the wafer edge yield loss with IDDQ failure was recovered. |
Starting Page | 1 |
Ending Page | 4 |
File Size | 646520 |
Page Count | 4 |
File Format | |
ISBN | 9781467309806 |
ISSN | 19461550 |
e-ISBN | 9781467309837 |
DOI | 10.1109/IPFA.2012.6306293 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2012-07-02 |
Publisher Place | Singapore |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Electrostatic discharges Scanning electron microscopy Tungsten Dielectrics Tin Inspection Monitoring |
Content Type | Text |
Resource Type | Article |
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