NDLI: Diffusion ability of Stress Induced Voiding in advanced BEOL copper process

Content Provider	IEEE Xplore Digital Library
Author	Huang, C. Liang, J.W. Juan, A. Su, K.C.
Copyright Year	2012
Description	Author affiliation: Reliability Technology & Assurance Division, UMC Inc. No.3, Li-Hsin Rd. II, Hsinchu Science Park, Taiwan 300, ROC (Huang, C.; Liang, J.W.; Juan, A.; Su, K.C.)
Abstract	Stress Induced Voiding is strongly influenced by test key structure. Wider and longer interconnect will have larger total supply of vacancies for voiding than a narrower one (reservoir effect). The critical diffusion volume which could cause RC open failure of advanced node Cu process is about $100um^{2}.$ The vacancy diffusion length is about ∼250um, that means a vacancy that is incredibly far away could participate in the via voiding process through random diffusion, and the diffusion coefficient would be about $0.34cm^{2}/sec.$ As was determined using Creep rate equation, the diffusion activation energy would be about 0.83eV, which might be consistent with an interface diffusion problem.
Starting Page	1
Ending Page	3
File Size	704959
Page Count	3
File Format	PDF
ISBN	9781467309806
ISSN	19461550
e-ISBN	9781467309837
DOI	10.1109/IPFA.2012.6306247
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-07-02
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Reliability Creep Resistance Copper Reservoirs creep rate Stress Induced Voiding Vacancy source Reservoir effect Plate structure Diffusion volume Diffusion length Stress gradient Stress migration
Content Type	Text
Resource Type	Article

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