NDLI: A simple solution for low-driving-current output buffer failed at the low voltage ESD zapping event

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A simple solution for low-driving-current output buffer failed at the low voltage ESD zapping event

Content Provider	IEEE Xplore Digital Library
Author	Jian-Hsing Lee Shih, J.R. Dao-Hong Yang Hing-Poh Kuan
Copyright Year	2012
Description	Author affiliation: Technology Quality and Reliability Division /Taiwan Semiconductor Manufacturing Company (Shih, J.R.; Dao-Hong Yang) \|\| ESD/EOS/Latch-up consultant of Richtech Technology Corporation (Jian-Hsing Lee) \|\| Technology Quality and Reliability Division/Systems-On-Silicon Manufacturing Company (Hing-Poh Kuan)
Abstract	With the channel current, the driver acts as the trigger device for I/O during ESD zapping event. The driver location in I/O transistor plays a key role in I/O ESD protection. The I/O will fail at low-voltage ESD zapping event if its driver is located at transistor edge, while it can pass the high-voltage ESD zapping if its driver is located at transistor center.
Starting Page	1
Ending Page	5
File Size	912826
Page Count	5
File Format	PDF
ISBN	9781467309806
ISSN	19461550
e-ISBN	9781467309837
DOI	10.1109/IPFA.2012.6306259
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-07-02
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrostatic discharges Transistors Stress Logic gates Substrates Bipolar transistors Reliability
Content Type	Text
Resource Type	Article

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