NDLI: Staelber-Wronski effect in hydrogenated amorphous germanium films

Content Provider	IEEE Xplore Digital Library
Author	Graeff, C.F.d.O. Santos, P.V. Marcano, G. Chambouleyron, I.
Copyright Year	1990
Description	Author affiliation: Inst. of Phys., Univ. Estadual de Campinas, Sao Paulo, Brazil (Graeff, C.F.d.O.; Santos, P.V.; Marcano, G.; Chambouleyron, I.)
Abstract	The authors report on the optoelectronic properties of high-quality a-Ge:H films prepared by the RF sputtering method and on their photodegradation resulting from light soaking at different temperatures and under different irradiation conditions (Staebler-Wronski effect). The material parameters of interest for solar device manufacturing presented are among the best reported to date: a low density of electron states in the pseudogap, a temperature-activated dark conductivity (E/sub a/>or=0.5 eV) down to below 200 K, and a photo-to-dark conductivity ratio of up to 2.0 under AM1 conditions. The dark conductivity and the photoconductivity of the a-Ge:H samples decrease after light soaking. The changes are metastable and both the defect formation and the defect annealing processes are temperature activated. As in the case of a-Si:H films, the time evolution of the conductivity changes is well represented by a stretched exponential type of decay with activated time constants.
Starting Page	1564
Ending Page	1568
File Size	352302
Page Count	5
File Format	PDF
DOI	10.1109/PVSC.1990.111871
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-05-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Amorphous materials Germanium Conductivity Temperature Radio frequency Sputtering Conducting materials Manufacturing Electrons Photoconductivity
Content Type	Text
Resource Type	Article

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