NDLI: Studies of substrate induced disorder in amorphous silicon by in-situ-Raman backscattering during film growth

Content Provider	IEEE Xplore Digital Library
Author	Schubert, M.B. Bauer, G.H.
Copyright Year	1990
Description	Author affiliation: Inst. fur Phys. Electronik, Stuttgart Univ., Germany (Schubert, M.B.; Bauer, G.H.)
Abstract	In situ Raman investigations on a-Si:H films as thin as 12 nm were performed, indicating that stress originating from the a-Si:H/substrate interface is induced in the film and relieved as film growth propagates. Amorphous silicon matrix disorder is found to be extremely sensitive to the material and to the chemical composition of the substrate. The correlation with Urbach energies from photothermal deflection spectroscopy indicates complicated changes in the electron density of states, thus contradicting a simple correlation of the valence band edge with angle fluctuations. Raman measurements performed in situ during subsequent breaks of deposition give strong evidence for the presence of a highly distorted interfacial layer on ITO and some lesser distortions on glass and on ZnO, while fully, relaxed film growth is observed on metal layers. Hydrogen-related Raman modes centered at 625 cm/sup -1/ decrease during film growth with decreasing TO half-width, i.e. in parallel to propagating relaxation of the network. An additional influence of substrate morphology on film distortion could not be ruled out.
Starting Page	1595
Ending Page	1600
File Size	280723
Page Count	6
File Format	PDF
DOI	10.1109/PVSC.1990.111878
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-05-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Amorphous silicon Substrates Stress Composite materials Chemicals Spectroscopy Electrons Fluctuations Distortion measurement Performance evaluation
Content Type	Text
Resource Type	Article

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