NDLI: Polycrystalline thin films of Hg/sub 1-x/Zn/sub x/Te for use in multijunction solar cells

Content Provider	IEEE Xplore Digital Library
Author	Arshed, S. Miles, R.W. Hill, R.
Copyright Year	1990
Description	Author affiliation: Newcastle Polytech., UK (Arshed, S.; Miles, R.W.; Hill, R.)
Abstract	Thin films of Hg/sub 1-x/Zn/sub x/Te were deposited onto Corning 7059 glass substrates using the coevaporation of HgTe with ZnTe. Layers were produced with bandgaps in the range of 0.6-2.25 eV by altering the alloy composition. The layers had absorption coefficients >10/sup 5//cm/sup 1/ and as high as 6*10/sup 5/ cm/sup 1/ in samples with E/sub g/>1.5 eV. The samples were p-type at 300 K with low resistivities ( approximately=0.5 Omega cm) and Hall mobilities in the range 2-12 cm/sup 2//V/sup 1/s/sup 1/ for layers <0.5- mu m thick. Arrhenius plots of the resistivities gave two straight lines corresponding to an activation energy, of 50 +or-5 meV for temperatures >220 K and an activation energy of 7 +or-4 meV for temperatures <220 K. The layers consisted of columnar grains, and the grain size increased with film thickness and with postgrowth annealing in argon. Heterojunctions with CdS and Cd/sub 1-x/Zn/sub x/S window, layers had I-V characteristics which were rectifying, and these devices exhibited the photovoltaic effect.
Starting Page	514
Ending Page	518
File Size	285184
Page Count	5
File Format	PDF
DOI	10.1109/PVSC.1990.111733
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-05-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Mercury (metals) Conductivity Temperature Sputtering Tellurium Glass Substrates Zinc compounds Photonic band gap
Content Type	Text
Resource Type	Article

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