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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Wieting, R.D. Bolingen, M. Anderson, J. Willett, D.R. |
| Copyright Year | 1990 |
| Description | Author affiliation: PV Electr. GmbH, Munich, Germany (Wieting, R.D.; Bolingen, M.) |
| Abstract | A connection is emerging between stability of TFS (thin film Si:H) modules and the degree of shunting; physical shunting is found to increase during light soaking, and it appears that this increase can be a cause of excessive degradation. Outdoor and accelerated light-soaking test results are presented which suggest this link, and a tentative model is presented. In outdoor exposure testing it was observed that modules tend to divide into two groups. Those with relatively good as-built shunt characteristics stabilize with approximately=23% power loss. In contrast, those with poorer as-built shunting have less predictable stability, and can show significantly greater power loss, up to more than 30%. The as-built shunting density appears to be an important factor which can influence stability. Implications for large-area module manufacture are considered. |
| Starting Page | 1569 |
| Ending Page | 1573 |
| File Size | 322693 |
| Page Count | 5 |
| File Format | |
| DOI | 10.1109/PVSC.1990.111872 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1990-05-21 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Transistors Stability Testing Zinc oxide Circuits Apertures Life estimation Multichip modules Voltage Degradation |
| Content Type | Text |
| Resource Type | Article |
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