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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Pivac, B. Kovacevic, I. Zulim, I. Gradisnik, V. |
| Copyright Year | 2000 |
| Description | Author affiliation: R. Boskovic Inst., Zagreb, Croatia (Pivac, B.) |
| Abstract | The effect of light soaking on a-Si:H films is well known as the Staebler-Wronski effect, though its complete mechanism is not yet clear. We studied the effect of light soaking with UV, white and sub-gap light on a-Si:H films, as well as the effect of thermal annealing in the dark. It was shown that the light soaking of the films with white and sub-bandgap light in air did not affect hydrogen concentration from Si-H bonds, and at the same time, enhanced oxidation of the films is observed. It means that oxygen incorporation was due to the broken backbonds to Si-H which very likely represent weak bonds. Moreover, it was found that, subgap and white light irradiation produced oxidation, UV light did not, while UV light caused even minor Si-H bond breaking. Vacuum annealing at 100/spl deg/C in the dark, on the other hand, caused hydrogen redistribution, enhancing Si-H bond concentration and recovering broken bonds. |
| Starting Page | 884 |
| Ending Page | 887 |
| File Size | 397995 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780357728 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.2000.916025 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2000-09-15 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Amorphous silicon Hydrogen Optical films Photovoltaic cells Production Annealing Oxidation Pollution measurement Electrons Dielectric thin films |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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