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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Nast, O. |
| Copyright Year | 2000 |
| Description | Author affiliation: Hahn-Meitner-Inst., Berlin, Germany (Nast, O.) |
| Abstract | In this study the Al-induced crystallization of a-Si on glass at temperatures below 550/spl deg/C is studied as an alternative process to solid phase and laser crystallization. The process of an Al and Si layer exchange during isothermal annealing is exploited for the formation of a continuous polycrystalline Si film. This Si layer consists of grains of several /spl mu/m in diameter and can be formed in less than 1 hour. The temperature as one of the most important parameters is studied to deliberately influence the grain size. It is shown that the lower the temperature the larger is the grain size but the slower is the overall crystallization process. For the use of the poly-Si in subsequent solar cell processing, various structures of the layered Al/Si system after crystallization are discussed. Their different feasibilities for Si thin-film solar cells are compared in terms of layer sequence and surface roughness. |
| Starting Page | 284 |
| Ending Page | 287 |
| File Size | 437782 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780357728 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.2000.915814 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2000-09-15 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Grain size Crystallization Temperature Photovoltaic cells Glass Solid lasers Isothermal processes Annealing Semiconductor films Semiconductor thin films |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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