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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yang, J. Banerjee, A. Lord, K. Guha, S. |
| Copyright Year | 2000 |
| Description | Author affiliation: United Solar Syst. Corp., Troy, MI, USA (Yang, J.) |
| Abstract | Amorphous silicon (a-Si) alloy solar cells made near the onset of micro-crystallinity exhibit superior characteristics. The amorphous to microcrystalline transition depends critically on the hydrogen dilution used during the film growth and the cell thickness. Cell open-circuit voltage (V/sub oc/) was used to determine the transition threshold for various hydrogen dilutions. Devices made on the transition edge exhibit a significant reduction in V/sub oc/ and a dispersion of its values due to nonuniform microcrystallite inclusions in an amorphous matrix. The best cells are made in the amorphous region just below the threshold. Status of a-Si and a-SiGe alloy component cells suitable for use in high efficiency triple-junction devices is presented. Using near threshold conditions, a large-area (/spl sim/922cm/sup 2/) fully encapsulated triple-junction module with an initial aperture-area efficiency of 11.9% has been achieved and confirmed by NREL. |
| Starting Page | 742 |
| Ending Page | 745 |
| File Size | 313034 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780357728 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.2000.915990 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2000-09-15 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Amorphous silicon Silicon alloys Photovoltaic cells Hydrogen Amorphous materials Photonic band gap Solar system Circuits Threshold voltage Semiconductor films |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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