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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Smets, A.H.M. Matsui, T. Kondo, M. |
| Copyright Year | 2006 |
| Description | Author affiliation: Res. Center for Photovoltaics, Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki (Smets, A.H.M.; Matsui, T.; Kondo, M.) |
| Abstract | The multi-hole-cathode very high frequency (MHC-VHF) plasma deposition technique is a new promising approach to achieve ultra high deposition rates, without the need to use extreme small electrode gaps at higher pressures. The microcrystalline silicon (muc-Si:H) high rate deposition conditions of the MHC-VHF plasma technique have been optimized using the micro-structural information of material, with 9.1% conversion efficiency when integrated in a pin-device, deposited at 2.3 $nms^{-1}$ by the high pressure depletion (HPD)-VHF plasma technique. The absence of the narrow high stretching modes (NHSM) at 2083 $cm^{-1}$ and 2101 $cm^{-1}$ in the IR spectrum together with the high film crystallinity $(X_{c}~0.55-0.70),$ is proposed as a simple tool to qualify the optimum micro-structural (muc-Si:H properties at high deposition rate conditions. The NHSM corresponds to the presence of mono- and dihydrides on crystalline oriented grain boundaries in less dense material, which oxidize in several days to weeks. Using the proposed optimization strategy we achieved to obtain dense muc-Si:H films at a deposition rate of 2.1 $nms^{-1}$ using MHC-VHF with the same micro-structural properties as the optimum HPD-VHF plasma deposition condition |
| Sponsorship | IEEE Electron Devices Soc |
| Starting Page | 1592 |
| Ending Page | 1595 |
| File Size | 600304 |
| Page Count | 4 |
| File Format | |
| ISBN | 1424400163 |
| DOI | 10.1109/WCPEC.2006.279790 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-05-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Frequency Hydrogen Plasma materials processing Grain boundaries Crystallization Plasma properties Electrodes Crystalline materials Plasma density |
| Content Type | Text |
| Resource Type | Article |
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