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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Bowden, S. Das, U.K. Hegedus, S.S. Birkmire, R.W. |
| Copyright Year | 2006 |
| Description | Author affiliation: Inst. of Energy Conversion, Delaware Univ., Newark, DE (Bowden, S.; Das, U.K.; Hegedus, S.S.; Birkmire, R.W.) |
| Abstract | Minority carrier lifetime measurements were used to optimize processes for amorphous/crystalline silicon heterojunction solar cells. A blue filter highlights surface lifetime and is used to determine the interaction between the front and rear depositions. On n-type substrates, depositing the front p-type layer first led to contamination of the rear surface such that a subsequent n-type deposition on the rear intended as a back surface field had no passivating quality and giving cells with low open-circuit voltages only 580 mV. Switching the order of deposition and depositing the rear n-layer first, improved the quality of the rear passivation and subsequently increased open circuit voltages to over 620 mV; without intrinsic buffer layers. Depositions of intrinsic material resulted in lifetimes of 2.4 ms, and wafer cleaning was found to have a significant impact on measured lifetime. Finally, immersion in hydrofluoric acid was found to be the easiest way to measure substrate lifetime above 1 ms |
| Sponsorship | IEEE Electron Devices Soc |
| Starting Page | 1295 |
| Ending Page | 1298 |
| File Size | 167392 |
| Page Count | 4 |
| File Format | |
| ISBN | 1424400163 |
| DOI | 10.1109/WCPEC.2006.279651 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-05-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Charge carrier lifetime Silicon Heterojunctions Photovoltaic cells Pollution measurement Surface contamination Amorphous materials Crystallization Filters Low voltage |
| Content Type | Text |
| Resource Type | Article |
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