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Content Provider | IEEE Xplore Digital Library |
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Author | Page, M.R. Iwaniczko, E. Xu, Y. Wang, Q. Yan, Y. Roybal, L. Branz, H.M. Wang, T.H. |
Copyright Year | 2006 |
Description | Author affiliation: Nat. Renewable Energy Lab., Golden, CO (Page, M.R.; Iwaniczko, E.; Xu, Y.; Wang, Q.; Yan, Y.; Roybal, L.; Branz, H.M.; Wang, T.H.) |
Abstract | We have developed hydrogenated amorphous silicon (a-Si:H) back contacts to both p-and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250degC) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage $(V_{oc}).$ The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p-type textured silicon wafers [1] |
Sponsorship | IEEE Electron Devices Soc |
Starting Page | 1485 |
Ending Page | 1488 |
File Size | 2011905 |
Page Count | 4 |
File Format | |
ISBN | 1424400163 |
DOI | 10.1109/WCPEC.2006.279750 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2006-05-07 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Photovoltaic cells Passivation Temperature US Government Amorphous silicon Voltage Plasma devices Renewable energy resources Laboratories Circuits |
Content Type | Text |
Resource Type | Article |
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