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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Baudrit, M. Algora, C. |
| Copyright Year | 2006 |
| Description | Author affiliation: Inst. de Energia Solar, Univ. Politecnica de Madrid (Baudrit, M.; Algora, C.) |
| Abstract | Concentration based on III-V solar cells is one of the most promising technologies to reduce cost of PV electricity. To achieve high efficiency making a better use of the solar spectrum and under very high concentration, multijunction solar cells are explored at the IES-UPM. To give a real understanding of all the phenomena occurring inside these devices, the development of a reliable theoretical model is essential. In this paper we present the first results obtained in our laboratory simulating lattice-matched GaInP/GaAs dual junction solar cells. To achieve these results we numerically analyze the complete structure including the tunnel junction |
| Sponsorship | IEEE Electron Devices Soc |
| Starting Page | 826 |
| Ending Page | 829 |
| File Size | 195360 |
| Page Count | 4 |
| File Format | |
| ISBN | 1424400163 |
| DOI | 10.1109/WCPEC.2006.279584 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-05-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | III-V semiconductor materials Photovoltaic cells Radiative recombination Gallium arsenide Predictive models Lighting Laboratories Silicon Analytical models Metallization |
| Content Type | Text |
| Resource Type | Article |
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