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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Nakada, T. Kijima, S. Kuromiya, Y. Arai, R. Ishii, Y. Kawamura, N. Ishizaki, H. Yamada, N. |
| Copyright Year | 2006 |
| Description | Author affiliation: Dept. of Electr. Eng., Aoyama Gakuin Univ., Kanagawa (Nakada, T.; Kijima, S.; Kuromiya, Y.; Arai, R.; Ishii, Y.; Kawamura, N.; Ishizaki, H.; Yamada, N.) |
| Abstract | We have fabricated two-terminal mechanical stacked chalcopyrite-based tandem devices to identify the technical issues required to achieve high performance solar cells in the near future. A tandem device with a $Ag(ln_{0.2}Ga_{0.8})Se_{2}$ (AIGS) top cell and a $Cu(ln,Ga)Se_{2}$ (CIGS) bottom cell showed an open-circuit-voltage $(V_{oc})$ of 1.46 V. It was, however, found that the short-circuit current $(J_{sc})$ of a two-terminal tandem device was limited by the low $J_{sc}$ of the filtered bottom cell because of a current mismatch between the top and bottom cells. In order to improve the Jsc of the filtered bottom cell, we have tried two process options, replacing ITO back contacts with high-mobility (Mo-doped $ln_{2}O_{3})$ IMO and the use of low-Ga content CIGS bottom cells. The $J_{sc}$ of the filtered bottom cells increased significantly using these techniques. As a result, an 8 % total-area (0.5 $cm^{2})$ efficiency 2-terminal mechanical stacked tandem device was achieved using a CIGS (15% Ga) bottom cell with an AIGS top cell fabricated with an IMO back contact |
| Sponsorship | IEEE Electron Devices Soc |
| Starting Page | 400 |
| Ending Page | 403 |
| File Size | 198919 |
| Page Count | 4 |
| File Format | |
| ISBN | 1424400163 |
| DOI | 10.1109/WCPEC.2006.279474 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-05-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Transistors Photovoltaic cells Indium tin oxide Sputtering Thin film devices Photonic band gap Fabrication Molecular beam epitaxial growth Zinc oxide Computer simulation |
| Content Type | Text |
| Resource Type | Article |
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