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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Fujikake, S. Uno, M. Iwasaki, S. Takeda, Y. Wada, T. Tanda, M. Takano, A. Yoshida, T. |
| Copyright Year | 2003 |
| Description | Author affiliation: Fuji Electr. Corp. R&D Ltd., Yokosuka, Japan (Fujikake, S.; Uno, M.; Iwasaki, S.; Takeda, Y.; Wada, T.; Tanda, M.; Takano, A.; Yoshida, T.) |
| Abstract | We have been developing large-area a-Si-based solar cells on plastic-film substrates. For further improvement in throughput, we tried to increase the deposition rates of the top a-Si cell and the bottom a-SiGe cell. Based on our previous work, we investigated the relation among the deposition conditions, peak-to-peak voltage of applied power and the stabilized efficiencies of small-area single-junction cells fabricated on the film. As a result, we obtained a-Si and a-SiGe single-junction cells with deposition rates of over 20 nm/min. They were applied to large-area a-Si/a-SiGe double-junction cells to achieve a stabilized efficiency of 8.0%. |
| Starting Page | 1760 |
| Ending Page | 1763 |
| File Size | 301847 |
| Page Count | 4 |
| File Format | |
| ISBN | 4990181603 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-05-11 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | PVSEC Advisory Committee |
| Subject Keyword | Fabrication Photovoltaic cells Substrates Electrodes Cathodes Hydrogen Voltage Amorphous silicon Photovoltaic systems Solar power generation |
| Content Type | Text |
| Resource Type | Article |
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