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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Winderbaum, S. Leo, A.J. Shea, S.P. Koval, T.D. Kumar, B. |
| Copyright Year | 2003 |
| Description | Author affiliation: Shamash Australia Pty Ltd., Australia (Winderbaum, S.) |
| Abstract | Remote PECVD SiN deposition parameters have been optimised for a fired-through metallization process on multicrystalline silicon solar cells. The best pressure, gas ratio and deposition temperature resulted in cell efficiencies of up to 14.3% when used with a 30 Ohm/square emitter and above 15% for 40 Ohm/square diffusion. Fourier transform infrared spectroscopy revealed that, during firing, the films lost a significant proportion of their hydrogen content, providing good bulk and surface passivation. In all cases the refractive index was reduced by approximately 1% during firing. The parameter space that gives optimal conditions for the lighter emitter coincides with a region in which the refractive index can be varied, resulting in greater process flexibility. |
| Starting Page | 1128 |
| Ending Page | 1130 |
| File Size | 451170 |
| Page Count | 3 |
| File Format | |
| ISBN | 4990181603 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-05-11 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | PVSEC Advisory Committee |
| Subject Keyword | Silicon compounds Refractive index Metallization Photovoltaic cells Temperature Fourier transforms Infrared spectra Firing Optical films Hydrogen |
| Content Type | Text |
| Resource Type | Article |
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