NDLI: Structural film characteristics related to the passivation properties of high-rate (>0.5 nm/s) plasma deposited a-SiN/sub x/:H

Content Provider	IEEE Xplore Digital Library
Author	Hong, J. Kessels, W.M.M. Soppe, W.J. Rieffe, H.C. Weeber, A.W. van de Sanden, M.C.M.
Copyright Year	2003
Description	Author affiliation: Dept. of Appl. Phys., Eindhoven Univ. of Technol., Netherlands (Hong, J.; Kessels, W.M.M.)
Abstract	This paper addresses the effects of a short high-temperature step, corresponding to the firing of the metallization on Si solar cells, on the structural and optical properties of high-rate (>0.5 nm/s) plasma deposited a-SiN/sub x/:H films. Three different types of a-SiN/sub x/:H films were prepared using (i) a N/sub 2/-SiH/sub 4/ expanding thermal plasma, (ii) a NH/sub 3/-SiH/sub 4/ expanding thermal plasma, and (iii) a NH/sub 3/-SiH/sub 4/ microwave plasma. The changes in structural and optical properties of the films have been investigated before and after the high temperature step by means of elastic recoil detection, spectroscopic ellipsometry, and Fourier transform infrared spectroscopy. The high temperature step induces significant changes in hydrogen content, mass density, and optical properties of the films and these thermally induced effects are more enhanced for Si-rich films than for N-rich films. It is found that a high density and thermal stability of the as-deposited films are crucial for obtaining good bulk passivation properties.
Starting Page	1158
Ending Page	1161
File Size	417152
Page Count	4
File Format	PDF
ISBN	4990181603
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-05-11
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	PVSEC Advisory Committee
Subject Keyword	Plasma properties Passivation Optical films Plasma temperature Thermal expansion Metallization Photovoltaic cells Semiconductor films Plasma density Infrared detectors
Content Type	Text
Resource Type	Article

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