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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Cid, M. Stem, N. Mackel, H. |
| Copyright Year | 2003 |
| Description | Author affiliation: Dept. de Engenharia de Syst. Electron., Escola Politecnica da Univ. de Sao Paulo, Brazil (Cid, M.; Stem, N.) |
| Abstract | Homogeneous and Gaussian profile emitters have been optimized using the most suitable parameters for two types of emitters: n/sup +/ and p/sup +/. The simulations revealed that both types are of high quality: high emitter collection efficiency and low emitter recombination. The n/sup +/pp/sup +/ and p/sup +/nn/sup +/ solar cell output parameters were compared for various emitter sheet resistivities, taking into consideration the grid-optimization. It was demonstrated that both structures (n/sup +/pp/sup +/ and p/sup +/nn/sup +/) with evaporated Ti contacts can provide high efficiencies, /spl eta//spl cong/22.6% and /spl eta//spl cong/21.2%, accordingly, for a wide range of emitter sheet resistivities. A comparison of the optimum cases using the recently proposed n/sub i/=9.65/spl times/10/sup 9/ cm/sup -3/ was made showing only slight differences in the efficiencies (about 0.1%). |
| Starting Page | 1388 |
| Ending Page | 1391 |
| File Size | 380786 |
| Page Count | 4 |
| File Format | |
| ISBN | 4990181603 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-05-11 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | PVSEC Advisory Committee |
| Subject Keyword | Silicon Photovoltaic cells Doping Conductivity Surface resistance Laboratories Australia Electronic mail Silver Analytical models |
| Content Type | Text |
| Resource Type | Article |
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