NDLI: Analysis and design of wide-band power amplifier using GaN

Content Provider	IEEE Xplore Digital Library
Author	Jaewoo Sim Jaeyeon Lim Myoungkyu Park Wenwoo Kang Bak-Il Mah
Copyright Year	2009
Description	Author affiliation: Peopleworks, Inc., Seoul, 152-766, Republic of Korea (Jaewoo Sim; Jaeyeon Lim; Myoungkyu Park; Wenwoo Kang) \|\| LIG-Nex1 Co., Ltd., Yongin-City, 446-912, Republic of Korea (Bak-Il Mah)
Abstract	This paper presents analysis and design of wide band power amplifiers. Two types of 20Watt broadband power amplifier-I and amplifier- II using GaN have been designed. The RF performance of the broadband amplifier-I (Non Feedback matching networks) has been compared with the broadband amplifier-II (Conventional Feedback matching networks). It achieves 20 Watts output power with 12dB ± 1.0dB gain from 500 MHz to 2500 MHz at VDS=28V. The broadband amplifier-I shows a significantly improved return loss and size. The broadband amplifier-I also has an efficiency improved by 6 percent with gain increased by 2.3dB from 500MHz to 2.5GHz. At lower frequencies from 500 MHz to 1000 MHz, the output power is 20 Watts with 40% efficiency. In addition, a broadband choke structure with a new technique was developed to obtain good isolation and low loss over the desired bandwidth.
Starting Page	2352
Ending Page	2355
File Size	1068419
Page Count	4
File Format	PDF
ISBN	9781424428014
DOI	10.1109/APMC.2009.5385457
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-12-07
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Broadband amplifiers Power amplifiers Gallium nitride Feedback Radiofrequency amplifiers Bandwidth Radio frequency Power generation Inductors Impedance Non-feedback Gallium Nitride broadband amplifiers broadband choke
Content Type	Text
Resource Type	Article

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