NDLI: RF MEMS activities at IMETU

Content Provider	IEEE Xplore Digital Library
Author	Zewen Liu Zhihao Hou Zhijian Li
Copyright Year	2008
Description	Author affiliation: Inst. of Microelectron., Tsinghua Univ., Beijing (Zewen Liu; Zhihao Hou; Zhijian Li)
Abstract	The research activities on RF-MEMS devices at IMETU (Institute of Microelectronics of Tsinghua University) are presented in this paper. The RF MEMS devices investigated include micro-machined inductors, switches, voltage controlled capacitors. The recent research focus is RF-MEMS switches. Two recently developed DC-contact switches are demonstrated, one is with series configuration and another is shunt. The two types of RF MEMS switch base on the same fabrication process. Borofloattrade glass was used as substrate and a special electroplating process is used to realize the low stress bridge membrane, which assure not only the possible power handling but also a low contact resistance. High performance switches with low insertion loss and high isolation have been obtained with very long life cycle more than 100M times. The S parameters characterization shows the DC-contact series RF MEMS switch is suitable for the application of frequency range from DC to 20 GHz, and the DC-contact shunt RF MEMS switch is suitable for the application of frequency range from DC to 30 GHz.
Starting Page	1
Ending Page	4
File Size	570462
Page Count	4
File Format	PDF
ISBN	9781424426416
DOI	10.1109/APMC.2008.4958442
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-12-16
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiofrequency microelectromechanical systems Switches Shunt (electrical) Frequency Microelectronics Inductors Voltage control Capacitors Fabrication Glass
Content Type	Text
Resource Type	Article

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