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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hokyun Ahn Jong-Won Lim Hong-Gu Ji Woo-Jin Chang Jae-Kyoung Mun Haecheon Kim |
| Copyright Year | 2007 |
| Description | Author affiliation: IT Convergence & Components Lab., Electron. & Telecommun. Res. Inst., Daejeon (Hokyun Ahn; Jong-Won Lim; Hong-Gu Ji; Woo-Jin Chang; Jae-Kyoung Mun; Haecheon Kim) |
| Abstract | In this paper, the fabrication technology of SiN- assisted 0.12 um double deck T-gate AlGaAs/InGaAs p-HEMT and 60 GHz-band MMICs for high rate personal area network (WPAN) systems is described. The effect of the gate head dimension, such as the $1^{st}-deck$ and the $2^{nd}-deck$ gate head size, on the DC and RF characteristics of the p-HEMT device and the device performance at the optimum gate head size are also presented. At the optimum gate head size, the p-HEMT device with two finger gates of 0.12 um length and 50 um width showed an extrinsic transconductance of 511 mS/mm and a drain current of 20.6 mA at 1.5 V of drain voltage. The cut-off frequency and the maximum frequency of oscillation were 96.8 GHz and 192.6 GHz, respectively. Gate head dimensions of the p-HEMT device are correlated to parasitic capacitances, including $C_{gs},$ which effect the RF performance including a cut-off frequency $(f_{T})$ and a maximum frequency of oscillation $(f_{max}).$ |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 686211 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424407484 |
| DOI | 10.1109/APMC.2007.4554850 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-12-11 |
| Publisher Place | Thailand |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | PHEMTs Cutoff frequency Radio frequency Fabrication Indium gallium arsenide MMICs Personal area networks Fingers Transconductance Voltage |
| Content Type | Text |
| Resource Type | Article |
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