NDLI: Feasibility of HgBrI as photoconductor for direct X-ray imaging

Content Provider	IEEE Xplore Digital Library
Author	Fornaro, L. Espinosa, H. Cuna, A. Aguiar, I. Noguera, A. Perez, M.
Copyright Year	2004
Description	Author affiliation: Radiochem. Dept., Compound Semicond. Group, Montevideo (Fornaro, L.; Espinosa, H.; Cuna, A.; Aguiar, I.; Noguera, A.; Perez, M.)
Abstract	Films of HgBrI (eutectic composition) were grown by the physical vapor deposition method on palladium-coated glass substrates 2"times2" in size. The growth was performed in a system especially designed and constructed for getting a fine control of the growth parameters. The best growth conditions were a source temperature of 116degC, a growth temperature of 50degC and a growth time of 3 hours, with an initial pressure of $6times10^{-3}$ Pa. Film thicknesses and grain sizes gave values ranging between 100 and 350 mum (10%), and between 10 and 50 mum, respectively. The dark current density of the films is higher than 10 $pA/mm^{2}$ for electric fields above 0.03 V/mum, and the resistivity is $3.8times10^{11}$ Omegacm. An electron mobility-lifetime of $6times10^{-6}$ $cm^{2/2}V$ was estimated. HgBrI films give a sensitivity to X-rays of 65 nC/Rcm2 , and a signal to dark relation of 12 at 750 mR/s and 32 KVp, with an electric field of 0.9 V/mum applied to the film. Dark current density, resistivity, electron mobility-lifetime product and response to the X-ray of the films are acceptable taking into account that this is the first attempt on growing films with this material, and indicate HgBrI as a new compound semiconductor candidate for the application
Starting Page	4337
Ending Page	4341
File Size	2868175
Page Count	5
File Format	PDF
ISBN	0780387007
ISSN	10823654
e-ISBN	0780387015
DOI	10.1109/NSSMIC.2004.1466847
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-16
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photoconductivity X-ray imaging Semiconductor films Temperature distribution Dark current Conductivity Electron mobility Chemical vapor deposition Glass Substrates
Content Type	Text
Resource Type	Article

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