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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hieronymi, F. Bottcher, E.H. Droge, E. Kuhl, D. Bimberg, D. |
| Copyright Year | 1993 |
| Description | Author affiliation: Inst. fur Festkorperphysik, Tech. Univ. Berlin, Germany (Hieronymi, F.; Bottcher, E.H.; Droge, E.; Kuhl, D.; Bimberg, D.) |
| Abstract | The authors report on high-performance InGaAs metal-semiconductor-metal (MSM) photodetectors for large area applications. Fe-doping was employed to obtain the high-resistivity InGaAs:Fe photoactive layer and the InP:Fe Schottky-barrier enhancement layer. The fabricated interdigitated MSM detectors have an active area of 350 /spl mu/m /spl times/ 350 /spl mu/m. At typical operating bias of 10 V, a capacitance of 1.6 pF and almost 1 GHz electrical bandwidth was achieved. The devices are very attractive for large area photoreceivers since they consume high-sensitivity and large-bandwidth operation due to low capacitive loading. |
| Starting Page | 627 |
| Ending Page | 629 |
| File Size | 314543 |
| Page Count | 3 |
| File Format | |
| ISBN | 0780309936 |
| DOI | 10.1109/ICIPRM.1993.380617 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1993-04-19 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Indium gallium arsenide Photodetectors Bandwidth Bonding Detectors Capacitance Optical surface waves Fingers High speed optical techniques Optical buffering |
| Content Type | Text |
| Resource Type | Article |
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