NDLI: Submicron pseudomorphic double heterojunction InAlAs/In/sub 0.7/Ga/sub 0.3/As HEMTs with high cut-off and current-drive capability

Content Provider	IEEE Xplore Digital Library
Author	Kwon, Y. Pavlidis, D. Brock, T. Ng, G.I. Tan, K.L. Velebir, J.R. Streit, D.C.
Copyright Year	1993
Description	Author affiliation: Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA (Kwon, Y.; Pavlidis, D.; Brock, T.; Ng, G.I.)
Abstract	Lattice-matched and strained (pseudomorphic) InAlAs/InGaAs high electron mobility transistors (HEMTs) are recognized as the most suitable components for operation at millimeter-waves. Pseudomorphic InAlAs/In/sub x/Ga/sub 1-x/As (x>0.53) HEMTs are particularly promising candidates for high-frequency and low-noise applications due to the superior material properties of the strained InGaAs channel. The InGaAs channel with excess indium provides improved low-field mobility characteristics, better carrier confinement and higher peak velocity due to the larger /spl Gamma/-to-L valley separation, compared with lattice-matched channels. The authors address such pseudomorphic designs using double heterostructure (DH) HEMT designs. They demonstrate the possibility of combining pseudomorphic rather than lattice-matched channels with a double heterostructure design to optimize the frequency and current drive characteristics of DH-HEMTs. The DC and microwave characteristics of the fabricated submicron DH-HEMTs are presented and compared with single heterostructure (SH)-devices processed at the same time. Improved f/sub max/ and higher current density have been obtained with the pseudomorphic DH-HEMTs compared to SH-HEMTs.
Starting Page	465
Ending Page	468
File Size	326451
Page Count	4
File Format	PDF
ISBN	0780309936
DOI	10.1109/ICIPRM.1993.380583
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-04-19
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Heterojunctions Indium compounds HEMTs MODFETs DH-HEMTs Indium gallium arsenide Millimeter wave transistors Material properties Carrier confinement Design optimization
Content Type	Text
Resource Type	Article

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