NDLI: DC characteristics of In/sub 0.52/Al/sub 0.48/As/ In/sub 0.53/(Al/sub x/Ga/sub 1-x/)/sub 0.47/As NPN double heterojunction bipolar transistors

Content Provider	IEEE Xplore Digital Library
Author	Huang, C.-H. Lee, T.-L. Lin, H.-H.
Copyright Year	1993
Description	Author affiliation: Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan (Huang, C.-H.; Lee, T.-L.; Lin, H.-H.)
Abstract	Wide band gap materials, InAlAs and InAlGaAs, were used in the collector of double heterojunction bipolar transistors (DHBTs). Base-collector designs and their effects on the DC characteristics of the DHBTs were investigated. It is found that in the InAlAs/InGaAs/InAlAs DHBT, the unusual large conduction band discontinuity results in a two-dimensional electron gas (2DEG) stored in base-collector abrupt junction. This 2DEG will push the heterojunction spike up and cause a reach-through effect with a InGaAs space layer inserted between the base-collector junction. Junction grading seems to be the only method to remove the effect. For the InAlAs/InGaAs/InAlGaAs DHBT, the smaller the conduction band discontinuity, the less significant is the 2DEG effect. When the discontinuity is smaller than 0.27 eV, the knee-shape and reach-through characteristics disappear.
Starting Page	439
Ending Page	442
File Size	312525
Page Count	4
File Format	PDF
ISBN	0780309936
DOI	10.1109/ICIPRM.1993.380589
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-04-19
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Double heterojunction bipolar transistors Indium compounds Heterojunction bipolar transistors Indium phosphide Optical materials Electrons Gallium arsenide Electric breakdown Molecular beam epitaxial growth
Content Type	Text
Resource Type	Article

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DC characteristics of In/sub 0.52/Al/sub 0.48/As/ In/sub 0.53/(Al/sub x/Ga/sub 1-x/)/sub 0.47/As NPN double heterojunction bipolar transistors

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