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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hirano, R. Kanazawa, T. Itoh, Y. Itokawa, T. Onodera, H. Nakamura, M. |
| Copyright Year | 1993 |
| Description | Author affiliation: Nikko Kyodo Co. Ltd., Toda, Saitama, Japan (Hirano, R.; Kanazawa, T.; Itoh, Y.; Itokawa, T.; Onodera, H.; Nakamura, M.) |
| Abstract | The authors have developed a modified liquid encapsulated Czochralski method with a double thermal baffle, by which low etch pitch density (EPD) S-doped InP crystals with lower carrier concentration can be grown. The low EPD S-doped InP crystals became rectangular in shape. When the faceted surfaces were clearly seen on the body, the dislocation density decreased drastically. The solid-liquid interface shape of the crystal investigated by A-B etching, scanning photoluminescence and infrared macrograph was flatter than that of the conventional crystals. The facet growth of the {111} planes was observed on the body of the newly developed crystal. |
| Starting Page | 648 |
| Ending Page | 651 |
| File Size | 861434 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780309936 |
| DOI | 10.1109/ICIPRM.1993.380611 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1993-04-19 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Indium phosphide Crystals Etching Polarization Temperature Furnaces Powders Density measurement Area measurement Chemicals |
| Content Type | Text |
| Resource Type | Article |
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