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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Berg, M. Hackbarth, T. Maile, B.E. Dickmann, J. Guhl, R. Adelseck, B. Hartnagel, H.L. |
| Copyright Year | 1996 |
| Description | Author affiliation: Daimler-Benz AG, Ulm, Germany (Berg, M.; Hackbarth, T.; Maile, B.E.; Dickmann, J.) |
| Abstract | A family of one, two and three stage monolithic amplifiers on InP substrate for W-band applications are presented. The circuits are realized with lattice matched InAlAs-InGaAs-InP HEMTs with a gate-width of W/sub G/=2/spl times/40 /spl mu/m and T-gates with a gate-length of L/sub G/=0.25 /spl mu/m. Coplanar waveguides and lumped elements are used for the matching and biasing networks. The circuits are fully passivated and contain common ports for the gate and the drain bias. A gain of 5.5, 11 and 14.5 dB and an input and output matching better than -10 dB were achieved for the one, two and three stage amplifiers at 80 GHz, respectively. The measured results show a good scaling of the achieved gain between the one and the multiple stage amplifiers and a good correlation with the simulated results. |
| Starting Page | 72 |
| Ending Page | 75 |
| File Size | 574933 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780332830 |
| DOI | 10.1109/ICIPRM.1996.491937 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-04-21 |
| Publisher Place | Germany |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MMICs Indium phosphide HEMTs MODFETs Coplanar waveguides Circuits Indium compounds Lattices Indium gallium arsenide Fabrication |
| Content Type | Text |
| Resource Type | Article |
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