NDLI: Subnanometer scale characterization of III-V-heterostructures

Content Provider	IEEE Xplore Digital Library
Author	Lakner, H.
Copyright Year	1996
Description	Author affiliation: Werkstoffe der Elektrotech., Duisburg Univ., Germany (Lakner, H.)
Abstract	Heterostructures based on III-V semiconductors play a dominant role for the production of optoelectronic and electronic high-speed or high-frequency devices. The necessary band-gap engineering is achieved by optimized growth procedures which allow to change the chemical composition and the crystal structure (e.g. strain or ordering) on the subnanometer scale. The evaluation of individual heterointerfaces with respect to chemical composition and crystal structure requires characterization techniques which offer the necessary high spatial resolution. Scanning transmission electron microscopy (STEM) offers several such quantitative techniques. It is the intention of this paper to demonstrate the capabilities of STEM in the subnanometer characterization of III-V-heterostructures based on InP-substrates. Additionally, the data obtained from nanocharacterization can be correlated to device performance.
Starting Page	15
Ending Page	18
File Size	820589
Page Count	4
File Format	PDF
ISBN	0780332830
DOI	10.1109/ICIPRM.1996.491922
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-04-21
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Spatial resolution X-ray scattering Probes Chemicals Electron beams Capacitive sensors Image resolution Energy resolution Focusing Atomic measurements
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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