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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Chou, Y.C. Leung, D. Lai, R. Grundbacher, R. Scarpulla, J. Barsky, M. Eng, D. Liu, P.H. Biedenbender, M. Oki, A. Streit, D.C. |
| Copyright Year | 2001 |
| Description | Author affiliation: Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA (Chou, Y.C.) |
| Abstract | The high-reliability performance of MMIC amplifiers fabricated using 0.1 /spl mu/m T-gate on both AlGaAs/InGaAs/GaAs and InGaAs/InAlAs/InP HEMTs is reported. Operating at an accelerated life test condition, two-stage balanced MMIC amplifiers were lifetested at three-temperatures (T/sub 1/=255/spl deg/C, T/sub 2/=270/spl deg/C and T/sub 3/=285/spl deg/C for GaAs HEMT; T/sub 1/=215/spl deg/C, T/sub 2/=230/spl deg/C and T/sub 3/=250/spl deg/C for InP HEMT) in an either air or N/sub 2/ ambient. For GaAs HEMT technology, the activation energy (Ea) is as high as 1.7 eV, achieving a projected median-time-to-failure (MTF)>6/spl times/10/sup 9/ hours at 125/spl deg/C junction temperature. For InP HEMT technology, the activation energy (Ea) is greater than 2 eV, achieving a projected median-time-to-failure (MTF)>1/spl times/10/sup 9/ hours at 125/spl deg/C junction temperature. MTF was determined by 3T constant current stress using |/spl Delta/S21|>1.0 dB as the failure criteria. The results demonstrate the high reliability of MMIC amplifiers fabricated using 0.1 /spl mu/m T-gate on both AlGaAs/InGaAs/GaAs and InGaAs/InAlAs/InP HEMTs based on small-signal microwave characteristics of HEMT MMICs. |
| Sponsorship | Minstr. Educ. |
| Starting Page | 29 |
| Ending Page | 32 |
| File Size | 357722 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780371380 |
| DOI | 10.1109/APMC.2001.985580 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2001-12-03 |
| Publisher Place | Taiwan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MMICs HEMTs MODFETs Indium gallium arsenide Gallium arsenide Indium phosphide Indium compounds Temperature Life estimation Life testing |
| Content Type | Text |
| Resource Type | Article |
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