NDLI: Single run etching and regrowth of InP/GaInAsP by GSMBE

Content Provider	IEEE Xplore Digital Library
Author	Gentner, J.-L. Jarry, P. Goldstein, L.
Copyright Year	1996
Description	Author affiliation: Alcatel Alsthom Recherche, Marcoussis, France (Gentner, J.-L.; Jarry, P.; Goldstein, L.)
Abstract	We report for the first time the successful etching of InP/GaInAsP heterostructures by the chemical beam etching technique using PCl/sub 3/, and on the combination of this etching technique with regrowth using standard GSMBE conditions. The kinetics of etching have been studied over a large temperature range. The difference in etch rates between InP and GaInAsP is explained by a difference in the group III chloride stoichiometry (InCl, GaCl/sub 3/). This difference leads probably to a modification of the surface composition during etching, the surface becoming richer in Ga. The dopants (Si, Be) are found to accumulate at the etch/regrown interface. The silicon atoms are not removed and create a /spl delta/-doped layer at the regrowth interface, The surface morphology of etched samples have been improved by etching at low temperature, in agreement with the RHEED observations showing a smooth 2D layer by layer etching mode in this case. In particular, the decoration of dislocations observed after etching at high temperature is not found on low temperature etched samples. This low temperature etching procedure is well adapted to the regrowth of high quality InP/GaInAsP structures.
Starting Page	529
Ending Page	532
File Size	475013
Page Count	4
File Format	PDF
ISBN	0780332830
DOI	10.1109/ICIPRM.1996.492300
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-04-21
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etching Indium phosphide Temperature distribution Photonic integrated circuits Hydrogen Surface contamination Chemical processes Chemical technology Integrated circuit technology Control systems
Content Type	Text
Resource Type	Article

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