NDLI: Degradation effects and stabilization of InAlAs/InGaAs-HFETs

Content Provider	IEEE Xplore Digital Library
Author	Weigel, K. Warth, M. Hirche, K. Heime, K.
Copyright Year	1996
Description	Author affiliation: Inst. fur Halbleitertechnik, Tech. Hochschule Aachen, Germany (Weigel, K.)
Abstract	In recent years the development of InAlAs/InGaAs-HFETs has advanced considerably, enabling maximum transconductances and cut-off frequencies to be realized. The HFET is therefore a highly attractive component for use in integrated circuits, e.g. low-noise amplifiers for satellite communication. For industrial use the reliability of the integrated circuit is of vital importance, but depends to a large extent on the reliability of the HFET. This aspect has hardly been discussed in the open HFET literature during the last years, or has only been partially realized. The available literature attributes the degradation of the HFET to the instability of the ohmic contacts, or to a change in the sheet concentration. In the work presented here, the degradation of the InAlAs/InGaAs-HFET is thoroughly examined for the first time and the free InAlAs-surface has been clearly established as the location of the degradation.
Starting Page	662
Ending Page	665
File Size	407881
Page Count	4
File Format	PDF
ISBN	0780332830
DOI	10.1109/ICIPRM.1996.492336
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-04-21
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation HEMTs MODFETs Thermal stresses Cutoff frequency Lattices Indium compounds Thermal loading Integrated circuit reliability Ohmic contacts
Content Type	Text
Resource Type	Article

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