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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yanjun Peng Tsang, K.F. Ling Sun Huaxiang Lu Yanjin Li Weiping Jing |
| Copyright Year | 2010 |
| Description | Author affiliation: Jiangsu Province Key Lab of ASIC Design, Nantong University, Nantong 226004, China (Yanjun Peng; Ling Sun; Huaxiang Lu; Yanjin Li; Weiping Jing) || Department of Electronic Engineering, City University of Hong Kong, Hong Kong (Tsang, K.F.) |
| Abstract | A 5.25GHz GaAs PHEMT power amplifier for 802.11a application has been realized in the OMMIC 0.2μm AlGaAs/InGaAs/GaAs PHEMT process. To guarantee the PHEMT unconditionally stable, a combined stabilizing circuit is used. Under a single supply voltage of +3.5V, this power amplifier exhibits linear output power of 24.8dBm (P1dB), small signal gain of 25.6dB and the power added efficiency (PAE) of 22% at P1dB. The die size is only 1.5mm×1.0mm. |
| Starting Page | 693 |
| Ending Page | 695 |
| File Size | 100656 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424457052 |
| e-ISBN | 9781424457083 |
| DOI | 10.1109/ICMMT.2010.5525029 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-05-08 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide PHEMTs Power amplifiers Resistors Power generation Broadband amplifiers Circuit stability Linearity Indium gallium arsenide Voltage |
| Content Type | Text |
| Resource Type | Article |
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