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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Miao Tianle Li WenJun Wang Huang Shentu Xudan Liu Jun Sun Lingling |
| Copyright Year | 2010 |
| Description | Author affiliation: Microelectronics CAD Center, Hangzhou Dianzi University, Hangzhou, Zhejiang, 310018, China (Miao Tianle; Li WenJun; Wang Huang; Shentu Xudan; Liu Jun; Sun Lingling) |
| Abstract | As an RF power device, SOILDMOS has a huge market demand and broad development prospects. In this paper, we conduct extensive measurement of the SOILDMOS chip using the vector network analyzer, microwave probe station, semiconductor parameter analyzer. The measuring results are obtained with Agilent IC-CAP 2008. With these results, SOILDMOS can be modeled based on the HiSIM-HV model. The parameter extraction and curve fitting are carried out with the IC-CAP tool. The experimental results show that the parameters extracted based on the HiSIM-HV model perform well. |
| Starting Page | 683 |
| Ending Page | 686 |
| File Size | 227459 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424457052 |
| e-ISBN | 9781424457083 |
| DOI | 10.1109/ICMMT.2010.5525025 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-05-08 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Parameter extraction Surface resistance Silicon MOSFET circuits MOS devices Radio frequency Semiconductor device measurement Soil measurements Radiofrequency amplifiers Power MOSFET |
| Content Type | Text |
| Resource Type | Article |
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