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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Cai, W.Z. Rice, D. Gogoi, B.P. Le, P. Davies, R.B. Lutz, D. Sucro, M. |
| Copyright Year | 2010 |
| Description | Author affiliation: HVVi Semiconductors, 10235 South 51st Street, Suite 100, Phoenix, AZ 85044 (Cai, W.Z.; Rice, D.; Gogoi, B.P.; Le, P.; Davies, R.B.; Lutz, D.; Sucro, M.) |
| Abstract | HVVFET™, with its proven RF performances, such as high power gain, high peak power density and superior ruggedness, represents a major step forward in realizing compact high-power modules for ground-based and airborne radars. In this paper, the dependence of the HVVFET's RF performances on process-related parameters-including Si epilayer thickness and top-surface gold-bump thickness (Hbump) — is examined. The packaged device with a 2mil-thick bump results in a total Cgd of 0.49pF and 0.38pF at Vds=10V and 30V respectively, from which an extrinsic component (Cgd, ext) of 0.29 pF is extracted. Independently, on a 1mil-bump sample, a Cgd, ext of 0.58 pF is obtained, doubling the value of the 2mil sample. The Cgd, ext-to-Hbump proportionality suggests that Cgd, ext predominantly arises from the parallel-plate, air-dielectric capacitor between the gate metal trace on the package and the exposed Si bulk. When operated at 1.03GHz with Vdq=36V in class-AB mode, the 2mil and 1mil samples exhibit an output power of 41.2W and 42.4W at 1dB compression, with a peak power gain of 20.1dB and 19.4dB, respectively. |
| Starting Page | 1925 |
| Ending Page | 1928 |
| File Size | 173930 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424457052 |
| e-ISBN | 9781424457083 |
| DOI | 10.1109/ICMMT.2010.5524811 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-05-08 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | L-band High power amplifiers Fiber reinforced plastics TCAD RF power MOSFET L-band radars shielding plate gate-to-drain capacitance |
| Content Type | Text |
| Resource Type | Article |
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