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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jung-Hui Tsai Der-Feng Guo Yuan-Hong Lee Ning-Feng Dale Wen-Shiung Lour |
| Copyright Year | 2010 |
| Description | Author affiliation: Department of Electronic Engineering, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Kaohsiung 802, Taiwan (Jung-Hui Tsai; Yuan-Hong Lee; Ning-Feng Dale) || Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung 202, Taiwan (Wen-Shiung Lour) || Department of Electronic Engineering, Air Force Academy, P.O. Box 14-49 Kang-shan, Kaohsiung County 820, Taiwan (Der-Feng Guo) |
| Abstract | In this article, the performance of a novel InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure is demonstrated by experimental results. The injecting electrons from superlattice emitter are easy to transport into the superlattice-base region for promoting the collector current by tunneling behavior. Furthermore, the average energy gap of base regime is substantially reduced by the use of InGaAs/GaAs superlattice structure for the requirement of low turn-on voltage. Experimentally, the transistor exhibits a maximum common-emitter current gain of 295 and a relatively low collector-emitter voltage of only 16 mV. In particular, the ideality factor of collector current near to unity is obtained. Based on the excellent transistor performance, the studied can provide a promise for signal amplifier and low-power circuit applications. |
| Starting Page | 1480 |
| Ending Page | 1482 |
| File Size | 81526 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424457052 |
| e-ISBN | 9781424457083 |
| DOI | 10.1109/ICMMT.2010.5524946 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-05-08 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide Bipolar transistors Indium gallium arsenide Superlattices Low voltage Molecular beam epitaxial growth Capacitive sensors Tunneling Heterojunction bipolar transistors Microwave circuits |
| Content Type | Text |
| Resource Type | Article |
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