NDLI: Glass- to-glass anodic bonding for high vacuum packaging of microelectronics and its stability

Content Provider	IEEE Xplore Digital Library
Author	Duck-Jung Lee Byeong-Kwon Ju Yun-Hi Lee Jin Jang Myung-Hwan Oh
Copyright Year	2000
Description	Author affiliation: Korea Inst. of Sci. & Technol., Seoul, South Korea (Duck-Jung Lee)
Abstract	In this work, we have developed a new high vacuum packaging method using a glass-to-glass bonding for the application to microelectronic devices such as field emission display (FED). The glass-to-glass anodic bonding was established and optimized using introducing thin amorphous silicon (a-Si) interlayer. Also, we propose that the amount of oxygen ions is one of the important factors during the bonding process, as confirmed from the SIMS and XPS analyses for the reaction region of Si-O bond in interface. Our method was very effective to reduce the bonding temperature and make the high vacuum package of microelectronic devices over 10/sup -4/ Torr. Finally, to evaluate the vacuum sealing capability of a FED panel packaged by the method, the leak characteristics of the vacuum was examined by spinning rotor gauge (SRG) during 6 months and the electron emission properties of the panel were measured continuously for time variation during 26 days.
Starting Page	253
Ending Page	258
File Size	471244
Page Count	6
File Format	PDF
ISBN	0780352734
ISSN	10846999
DOI	10.1109/MEMSYS.2000.838525
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-01-27
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bonding Packaging Microelectronics Stability Glass Vacuum technology Temperature Testing Flat panel displays Electron emission
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Mechanical Engineering Electrical and Electronic Engineering

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