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Ultra-low temperature anodic bonding of silicon and borosilicate glass
| Content Provider | Scilit |
|---|---|
| Author | Knapkiewicz, Pawel |
| Copyright Year | 2019 |
| Description | Journal: Semiconductor Science and Technology Ultra-low temperature anodic bonding of silicon and borosilicate glass, has been described for the firs time. The article gives the arguments why the issue of non-standard anodic bonding of silicon and glass is important. Some examples of solutions were indicated, in which the development of a new anodic bonding method was crucial for the development of the final solution. A series of experiments were carried out, the effect of which is to obtain a permanent connection of silicon and glass at a temperature of 120°C. Optimal conditions of the ultra-low temperature of anodic bonding process were given. The bonding force was tested, which was more than 1.5 MPa. |
| Related Links | http://iopscience.iop.org/article/10.1088/1361-6641/aafecc/pdf |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/1361-6641/aafecc |
| Journal | Semiconductor Science and Technology |
| Issue Number | 3 |
| Volume Number | 34 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2019-01-15 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Temperature Anodic Bonding |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
