NDLI: The improved method of obtaining crystals with a small number of linear defects

Content Provider	IEEE Xplore Digital Library
Author	Abdrafikov, S.N. Mihalicin, A.A. Mihalicina, O.V. Pogrebnyak, A.P.
Copyright Year	2002
Description	Author affiliation: JSC The plant "Kristall", Chelyabinsk, Russia (Abdrafikov, S.N.; Mihalicin, A.A.; Mihalicina, O.V.; Pogrebnyak, A.P.)
Abstract	The problem of obtaining a sufficient quantity of synthetic quartz crystals with a small number of linear defects is one of great urgency. The linear defects, such as growth dislocations, are mainly inherited from the seed. There are technologies (A.F. Arminton and I.F. Balasio, Proc. IEEE Int. Freq. Control Symp., pp. 3-7, 1984; Y. Mikawa et al, ibid, pp. 773-776, 1999) which provide practically complete exclusion of the inherited dislocations in the grown quartz crystals. However, using the x-dimension of a rectangular seed of 70 mm, these technologies diminish the crystal working dimension along the y-axis by 240 mm and 60 mm respectively. The method of obtaining crystals with small number of linear defects which is offered here allows reduction of the diminution of the crystal working dimension along the y-axis up to 10 mm, and also increase in the volume of the low dislocation region along the x-axis up to the necessary dimensions. Now at the plant "Kristall", there is a sufficient quantity of seed-crystals with a small number of linear defects, and with low etch channel density.
Sponsorship	IEEE Ultrasonics, Ferroelectrics, & Frequency Control Soc
Starting Page	347
Ending Page	353
File Size	444371
Page Count	7
File Format	PDF
ISBN	0780370821
DOI	10.1109/FREQ.2002.1075907
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-31
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Crystals Etching Mass production Resonator filters Resonant frequency Chemical processes Chemical products Manufacturing Filling
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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