NDLI: A comparative study of radio frequency stability performance of Double Gate MOSFET and Double Gate Tunnel FET

Content Provider	IEEE Xplore Digital Library
Author	Sivasankaran, K. Mallick, P.S.
Copyright Year	2013
Description	Author affiliation: Sch. of Electr. Eng., VIT Univ., Vellore, India (Sivasankaran, K.; Mallick, P.S.)
Abstract	This paper presents comparative study on radio frequency (RF) stability performance of Double Gate MOSFET (DG-MOSFET) and Double Gate Tunnel FET (DG-TFET). A non-quasi static small signal model is used to extract small signal parameters which are then verified with extracted parameters through simulation. The high frequency performance of DG-MOSFET and DG-TFET is evaluated by extracting RF Figure of Merit (FoM) such as cut-off frequency $(f_{t}),$ maximum oscillation frequency $(f_{max})$ along with stability factor. The result shows that DG-TFET has better cut-off frequency and stability performance as compared to DG-MOSFET.
Starting Page	220
Ending Page	224
File Size	348012
Page Count	5
File Format	PDF
e-ISBN	9781467361262
DOI	10.1109/ICGCE.2013.6823432
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-12-12
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency Performance evaluation MOSFET Double Gate MOSFET Cutoff frequency Stability Factor Logic gates Small-signal model Stability analysis Circuit stability Radio Frequency Double Gate Tunnel FET
Content Type	Text
Resource Type	Article

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A comparative study of radio frequency stability performance of Double Gate MOSFET and Double Gate Tunnel FET