NDLI: High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications

Content Provider	IEEE Xplore Digital Library
Author	Whitaker, B. Cole, Z. Passmore, B. Martin, D. McNutt, T. Lostetter, A. Ericson, M.N. Frank, S.S. Britton, C.L. Marlino, L.D. Mantooth, A. Francis, M. Lamichhane, R. Shepherd, P. Glover, M.
Copyright Year	2014
Description	Author affiliation: Univ. of Arkansas, Fayetteville, AR, USA (Mantooth, A.; Francis, M.; Lamichhane, R.; Shepherd, P.; Glover, M.) \|\| Oak Ridge Nat. Lab., Oak Ridge, TN, USA (Ericson, M.N.; Frank, S.S.; Britton, C.L.; Marlino, L.D.) \|\| Arkansas Power Electron. Intl Inc., Fayetteville, AR, USA (Whitaker, B.; Cole, Z.; Passmore, B.; Martin, D.; McNutt, T.; Lostetter, A.)
Abstract	This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high-frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter's switching frequency was then increased to 500 kHz to prove the high-frequency capability of the power module. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.
Starting Page	36
Ending Page	40
File Size	702147
Page Count	5
File Format	PDF
ISBN	9781479954933
DOI	10.1109/WiPDA.2014.6964620
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-10-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET Silicon carbide Switching frequency Multichip modules Logic gates Power Module Power electronics Silicon Carbide Power Electronics Power generation
Content Type	Text
Resource Type	Article

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