NDLI: A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

Content Provider	IEEE Xplore Digital Library
Author	Lamichhane, R.R. Ericsson, N. Frank, S. Britton, C. Marlino, L. Mantooth, A. Francis, M. Shepherd, P. Glover, M. Perez, S. McNutt, T. Whitaker, B. Cole, Z.
Copyright Year	2014
Description	Author affiliation: Oak Ridge Nat. Lab. (ORNL), Oak Ridge, TN, USA (Ericsson, N.; Frank, S.; Britton, C.; Marlino, L.) \|\| Arkansas Power Electron. Int. (APEI), Fayetteville, AR, USA (McNutt, T.; Whitaker, B.; Cole, Z.) \|\| Univ. of Arkansas, Fayetteville, AR, USA (Mantooth, A.; Francis, M.; Shepherd, P.; Glover, M.; Perez, S.) \|\| Intel Corp. Hillsboro, Hillsboro, OR, USA (Lamichhane, R.R.)
Abstract	Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.
Starting Page	414
Ending Page	417
File Size	1436938
Page Count	4
File Format	PDF
ISBN	9781479929177
ISSN	1943653X
e-ISBN	9781479929184
DOI	10.1109/ISPSD.2014.6856064
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Silicon carbide Vehicles Silicon Power electronics MOSFET Integrated circuit modeling
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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