NDLI: A high temperature, double-sided cooling SiC power electronics module

Content Provider	IEEE Xplore Digital Library
Author	Zhang, H. Ang, S.S. Mantooth, H.A. Krishnamurthy, S.
Copyright Year	2013
Description	Author affiliation: United Technol. Res. Center, East Hartford, CT, USA (Krishnamurthy, S.) \|\| Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA (Zhang, H.; Ang, S.S.; Mantooth, H.A.)
Abstract	A high temperature, wire-bondless power electronics module with a double-sided cooling capability is proposed and successfully fabricated. In this module, a low-temperature co-fired ceramic (LTCC) substrate was used as the dielectric and chip carrier. Conducting vias were created on the LTCC carrier to realize the interconnection. The absent of a base plate reduced the overall thermal resistance and also improved the fatigue life by eliminating a large-area solder layer. Nano silver paste was used to attach power devices to the DBC substrate as well as to pattern the gate connection. Finite element simulations were used to compare the thermal performance to several reported double-sided power modules. Electrical measurements of a SiC MOSFET and SiC diode switching position demonstrated the functionality of the module.
Starting Page	2877
Ending Page	2883
File Size	1086398
Page Count	7
File Format	PDF
ISBN	9781479903368
DOI	10.1109/ECCE.2013.6647075
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET Cooling Silicon carbide Multichip modules Logic gates Junctions Substrates
Content Type	Text
Resource Type	Article

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