NDLI: Investigation of driver circuits for GaN HEMTs in leaded packages

Content Provider	IEEE Xplore Digital Library
Author	Zhan Wang Honea, J. Yuxiang Shi Hui Li
Copyright Year	2014
Description	Author affiliation: Center for Adv. Power Syst., Florida State Univ., Tallahassee, FL, USA (Yuxiang Shi; Hui Li) \|\| Power Electron. Circuit Group, Transphorm Inc., Goleta, CA, USA (Zhan Wang; Honea, J.)
Abstract	GaN devices have superior performance over Si-based devices, but even a very small parasitic inductance makes GaN HEMT hard to drive. Many advanced leadless packages are proposed for lower parasitic inductance to fully realize advantages of GaN devices. However, leaded packages are still dominant in industrial applications because of their simplicity for PCB assembly and capability for a wide variety of heat-sinking techniques. In this paper, the performance of a basic half bridge power circuit based on GaN HEMTs with TO package (TO-220) is analyzed, and GaN device driver design is also discussed. Simulation and experimental results are provided for validation.
Starting Page	81
Ending Page	87
File Size	2386821
Page Count	7
File Format	PDF
ISBN	9781479954933
DOI	10.1109/WiPDA.2014.6964629
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-10-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ferrites Switches Logic gates HEMTs Driver Gallium nitride MODFETs GaN HEMT Switching circuits Ferrite bead Leaded package
Content Type	Text
Resource Type	Article

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