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2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

2014 IEEE Workshop on Wide Bandgap Power Devices and Applications

Organization committee

Table of contents

Driving and Characterization of wide bandgap semiconductors for voltage source converter applications

Reliability and high field related issues in GaN-HEMT devices — Part I

Wide-band Gap (WBG) WBG devices enabled MV power converters for utility applications — Opportunities and challenges

Packaging technologies to exploit the attributes of WBG power electronics

4500 volt Si/SiC hybrid module qualification for modern megawatt scale wind energy inverters

Understanding the limitations and impact factors of wide bandgap devices' high switching-speed capability in a voltage source converter

The development of a high-voltage power device evaluation platform

Packaging SiC power semiconductors — Challenges, technologies and strategies

Application-based review of GaN HFETs

Advances in reliability and operation space of high-voltage GaN power devices on Si substrates

Degradation mechanisms of AlGaN/GaN HEMTs on sapphire, Si, and SiC substrates under proton irradiation

High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications

Development of packaging technologies for advanced SiC power modules

A 10-kW SiC inverter with a novel printed metal power module with integrated cooling using additive manufacturing

10 kV, 120 a SiC MOSFET modules for a power electronics building block (PEBB)

Process optimization of multicycle rapid thermal annealing of Mg-implanted GaN

Design and fabrication of high current AlGaN/GaN HFET for Gen III solid state transformer

An integrated gate driver in 4H-SiC for power converter applications

Understanding the influence of dead-time on GaN based synchronous boost converter

Discussions on the semiconductor-based galvanic isolation

Investigation of driver circuits for GaN HEMTs in leaded packages

An isolated bi-directional soft-switched high-frequency-ac link DC-AC converter using SiC MOSFETs

Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure

Impact of current measurement on switching characterization of GaN transistors

The influence of SiC/SiO2 interface morphology on the electrical characteristics of SiC MOS structures

Optically-switched high-voltage bipolar SiC device

Enhanced oxidation of sic substrates using La2O3 capped annealing and a proposal for uniform LaSiON gate dielectric formation

Passivation of SiO2/SiC interface with La2O3 capped oxidation

Effect of post deposition annealing for high mobility 4H-SiC MOSFET utilizing lanthanum silicate and atomic layer deposited SiO2

Wide bandgap power devices based high efficiency power converters for data center application

125 W multiphase GaN/Si hybrid point of load converter for improved high load efficiency

A full-bridge current-source isolated DC/DC converter with reduced number of switches and voltage stresses for photovoltaic applications

Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs

6.5 kV SiC normally-off JFETs — Technology status

Silicon carbide transient voltage suppressor for next generation lightning protection

Temperature dependent design of Silicon Carbide Schottky diodes

A 12 to 1 V five phase interleaving GaN POL converter for high current low voltage applications

High-frequency wireless charging system study based on normally-off GaN HEMTs

Reflected wave phenomenon in motor drive systems using wide bandgap devices

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

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