NDLI: A fast-settling GaAs enhanced frequency synthesizer

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A fast-settling GaAs enhanced frequency synthesizer

Content Provider	IEEE Xplore Digital Library
Author	Naber, J.F. Singh, H.P. Sadler, R.A. Tanis, W.J. Koshar, A. Segalla, G.
Copyright Year	1991
Description	Author affiliation: ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA (Naber, J.F.; Singh, H.P.; Sadler, R.A.)
Abstract	An indirect, phase-locked loop, GaAs enhanced frequency synthesizer with 700-ns settling time has been developed using a 0.4 mu m gate multifunction self-aligned gate (MSAG) process. The two-chip GaAs insertion reduces the size of an existing synthesizer from 90 cubic inches to only 30 cubic inches. The 6.05.50.9 inch module contains a 400-gate, GaAs programmable divider and a sample and hold (S/H) which improves the settling time 77% and reduces the size 67% over the current state-of-the-art synthesizer. Furthermore, the divider reduces power dissipation by 9.7 W, while the S/H reduces power dissipation by 1.3 W.<>
Starting Page	353
Ending Page	356
File Size	220631
Page Count	4
File Format	PDF
ISBN	078030196X
DOI	10.1109/GAAS.1991.172712
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-10-20
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Frequency synthesizers Voltage-controlled oscillators Gallium arsenide Detectors Voltage Frequency conversion Power dissipation Phase locked loops Phase detection Counting circuits
Content Type	Text
Resource Type	Article

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