NDLI: Yield determination and design optimization of GaAs MESFETs using a physical simulator

Content Provider	IEEE Xplore Digital Library
Author	Bilbro, G.L. Stoneking, D.E. Trew, R.J.
Copyright Year	1991
Description	Author affiliation: Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA (Bilbro, G.L.; Stoneking, D.E.; Trew, R.J.)
Abstract	The authors have enhanced TEFLON, the physics based large-signal GaAs MESFET model, to predict yield of a GaAs MESFET design before fabrication. Device acceptance criteria include large-signal RF operating characteristics such as maximum power added efficiency and power out at 1 dB gain compression. SUPREM 3.5 has been incorporated into TEFLON so that optimizable parameters include processing specifications for material deposition, ion implantation, and annealing as well as physical parameters such as device geometry. The authors have incorporated Monte Carlo techniques to statistically treat disturbances of the physical and processing parameters. Finally they have integrated the yield estimation modules with an optimizer so a design can be centered for maximum yield in the presence of process disturbances.<>
Starting Page	171
Ending Page	174
File Size	269275
Page Count	4
File Format	PDF
ISBN	078030196X
DOI	10.1109/GAAS.1991.172664
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-10-20
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Radio frequency Ion implantation Annealing Gallium arsenide Predictive models MESFETs Physics Gain Design optimization
Content Type	Text
Resource Type	Article

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Yield optimization using a GaAs process simulator coupled to a physical device model

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