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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zelley, C.A. Barnes, A.R. Bannister, D.C. Ashcroft, R.W. |
| Copyright Year | 2000 |
| Description | Author affiliation: DERA, Malvern, UK (Zelley, C.A.) |
| Abstract | We present a 60 GHz integrated sub-harmonic receiver fabricated using the TRW 0.15 /spl mu/m gate length GaAs pHEMT foundry process. The receiver MMIC consists of a four stage LNA, a sub-harmonic diode mixer and a single stage LO buffer amplifier. The chip size is 5.8 mm/spl times/2.2 mm. The receiver MMIC has been integrated into a coaxial package for system evaluation. The packaged receiver module has a measured conversion gain of /spl ges/8 dB across the 58 GHz to 67 GHz frequency band and a typical noise figure of 5.8 dB. The use of a sub-harmonic mixer allows LO operation over the 21 to 27 GHz frequency range at a low LO drive level of -5 dBm and eliminates the need for high cost mm-wave sources. This is believed to be the first single chip V-band receiver manufactured using a commercially available, high yield, production foundry process. This paper describes the design, packaging and measured performance of the integrated sub-harmonic receiver MMIC. |
| Starting Page | 175 |
| Ending Page | 178 |
| File Size | 372740 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780359682 |
| ISSN | 10647775 |
| DOI | 10.1109/GAAS.2000.906317 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2000-11-05 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Semiconductor device measurement Gallium arsenide PHEMTs MMICs Packaging Foundries Coaxial components Frequency measurement Diodes Mixers |
| Content Type | Text |
| Resource Type | Article |
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